The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source . the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen 采用等离子体辅助化学气相沉积方法，以碳氢化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作为碳源物质，用高纯氢气作为载气，将碳源物质携带进入反应室。
